IndiumV3, Chine, Analysis, bibRecord, 000314

Chemical vapor deposition of graphene on liquid metal catalysts

Identifieur interne : 000314 ( Chine/Analysis ); précédent : 000313; suivant : 000315

Chemical vapor deposition of graphene on liquid metal catalysts

Auteurs : RBID : Pascal:13-0108205

Descripteurs français

Pascal (Inist)
- Dépôt chimique phase vapeur, Graphène, Métal liquide, Catalyseur, Préparation chimique, 8107, 8115G.

English descriptors

KwdEn :
- Catalyst, Chemical preparation, Chemical vapor deposition, Graphene, Liquid metal.

Abstract

Several molten metals and their alloys were used for graphene growth by atmosphere pressure chemical vapor deposition. It was found that liquid gallium (Ga) has very effective catalytic ability for graphene formation. Graphene with a controllable thickness and quality can be synthesized on a molten Ga surface only in a few minutes. Compared to solid catalysts, several new and unexpected results have been observed on Ga surface including graphene formation on a liquid surface at high temperature and keeping on a liquid surface at room temperature, time-dependent thickness control and a decrease in quality with increasing hydrogen flow. These growth characteristics can be attributed to the distinct differences in physical/chemical properties of liquid catalysts versus solids, and consequently distinct catalytic behaviors with the precursor gas. Other molten metals and alloys, including indium, tin, tin-nickle and tin-copper etc., were also explored for graphene synthesis. Use of liquid catalysts opens a new window for graphene synthesis.

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Pascal:13-0108205

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Chemical vapor deposition of graphene on liquid metal catalysts</title>
<author><name>GUQIAO DING</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road</s1>
<s2>Shanghai 200050</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Shanghai 200050</wicri:noRegion>
</affiliation>
</author>
<author><name>YUN ZHU</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road</s1>
<s2>Shanghai 200050</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Shanghai 200050</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Center for Low-dimensional Materials, Micro-nano Devices and System, Changzhou University</s1>
<s2>Changzhou 213164</s2>
<s3>CHN</s3>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Changzhou 213164</wicri:noRegion>
</affiliation>
</author>
<author><name>SHUMIN WANG</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road</s1>
<s2>Shanghai 200050</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Shanghai 200050</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Microtechnology and Nanoscience, Chalmers University of Technology</s1>
<s2>41296 Goteborg</s2>
<s3>SWE</s3>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Suède</country>
<wicri:noRegion>41296 Goteborg</wicri:noRegion>
</affiliation>
</author>
<author><name>QIAN GONG</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road</s1>
<s2>Shanghai 200050</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Shanghai 200050</wicri:noRegion>
</affiliation>
</author>
<author><name>LEI SUN</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road</s1>
<s2>Shanghai 200050</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Shanghai 200050</wicri:noRegion>
</affiliation>
</author>
<author><name>TIANRU WU</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road</s1>
<s2>Shanghai 200050</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Shanghai 200050</wicri:noRegion>
</affiliation>
</author>
<author><name>XIAOMINGXIE</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road</s1>
<s2>Shanghai 200050</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Shanghai 200050</wicri:noRegion>
</affiliation>
</author>
<author><name>MIANHENGJIANG</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road</s1>
<s2>Shanghai 200050</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Shanghai 200050</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">13-0108205</idno>
<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 13-0108205 INIST</idno>
<idno type="RBID">Pascal:13-0108205</idno>
<idno type="wicri:Area/Main/Corpus">001178</idno>
<idno type="wicri:Area/Main/Repository">001058</idno>
<idno type="wicri:Area/Chine/Extraction">000314</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0008-6223</idno>
<title level="j" type="abbreviated">Carbon : (N. Y.)</title>
<title level="j" type="main">Carbon : (New York, NY)</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Catalyst</term>
<term>Chemical preparation</term>
<term>Chemical vapor deposition</term>
<term>Graphene</term>
<term>Liquid metal</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Dépôt chimique phase vapeur</term>
<term>Graphène</term>
<term>Métal liquide</term>
<term>Catalyseur</term>
<term>Préparation chimique</term>
<term>8107</term>
<term>8115G</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Several molten metals and their alloys were used for graphene growth by atmosphere pressure chemical vapor deposition. It was found that liquid gallium (Ga) has very effective catalytic ability for graphene formation. Graphene with a controllable thickness and quality can be synthesized on a molten Ga surface only in a few minutes. Compared to solid catalysts, several new and unexpected results have been observed on Ga surface including graphene formation on a liquid surface at high temperature and keeping on a liquid surface at room temperature, time-dependent thickness control and a decrease in quality with increasing hydrogen flow. These growth characteristics can be attributed to the distinct differences in physical/chemical properties of liquid catalysts versus solids, and consequently distinct catalytic behaviors with the precursor gas. Other molten metals and alloys, including indium, tin, tin-nickle and tin-copper etc., were also explored for graphene synthesis. Use of liquid catalysts opens a new window for graphene synthesis.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0008-6223</s0>
</fA01>
<fA02 i1="01"><s0>CRBNAH</s0>
</fA02>
<fA03 i2="1"><s0>Carbon : (N. Y.)</s0>
</fA03>
<fA05><s2>53</s2>
</fA05>
<fA08 i1="01" i2="1" l="ENG"><s1>Chemical vapor deposition of graphene on liquid metal catalysts</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>GUQIAO DING</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>YUN ZHU</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>SHUMIN WANG</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>QIAN GONG</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>LEI SUN</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>TIANRU WU</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>XIAOMINGXIE</s1>
</fA11>
<fA11 i1="08" i2="1"><s1>MIANHENGJIANG</s1>
</fA11>
<fA14 i1="01"><s1>State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road</s1>
<s2>Shanghai 200050</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Center for Low-dimensional Materials, Micro-nano Devices and System, Changzhou University</s1>
<s2>Changzhou 213164</s2>
<s3>CHN</s3>
<sZ>2 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Department of Microtechnology and Nanoscience, Chalmers University of Technology</s1>
<s2>41296 Goteborg</s2>
<s3>SWE</s3>
<sZ>3 aut.</sZ>
</fA14>
<fA20><s1>321-326</s1>
</fA20>
<fA21><s1>2013</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>11401</s2>
<s5>354000182538570370</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2013 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>24 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>13-0108205</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Carbon : (New York, NY)</s0>
</fA64>
<fA66 i1="01"><s0>GBR</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Several molten metals and their alloys were used for graphene growth by atmosphere pressure chemical vapor deposition. It was found that liquid gallium (Ga) has very effective catalytic ability for graphene formation. Graphene with a controllable thickness and quality can be synthesized on a molten Ga surface only in a few minutes. Compared to solid catalysts, several new and unexpected results have been observed on Ga surface including graphene formation on a liquid surface at high temperature and keeping on a liquid surface at room temperature, time-dependent thickness control and a decrease in quality with increasing hydrogen flow. These growth characteristics can be attributed to the distinct differences in physical/chemical properties of liquid catalysts versus solids, and consequently distinct catalytic behaviors with the precursor gas. Other molten metals and alloys, including indium, tin, tin-nickle and tin-copper etc., were also explored for graphene synthesis. Use of liquid catalysts opens a new window for graphene synthesis.</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001C01A03</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B80A07Z</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B80A15G</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Dépôt chimique phase vapeur</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Chemical vapor deposition</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Depósito químico fase vapor</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Graphène</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Graphene</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Graphene</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Métal liquide</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Liquid metal</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Metal líquido</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Catalyseur</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Catalyst</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Catalizador</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Préparation chimique</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Chemical preparation</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>8107</s0>
<s4>INC</s4>
<s5>76</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>8115G</s0>
<s4>INC</s4>
<s5>77</s5>
</fC03>
<fN21><s1>084</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

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Chemical vapor deposition of graphene on liquid metal catalysts

Chemical vapor deposition of graphene on liquid metal catalysts

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri